The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 21, 2021
Filed:
Apr. 09, 2019
Nxp Usa, Inc., Austin, TX (US);
Xin Lin, Phoenix, AZ (US);
Zhihong Zhang, Chandler, AZ (US);
Xu Cheng, Chandler, AZ (US);
Ronghua Zhu, Chandler, AZ (US);
NXP USA, INC., Austin, TX (US);
Abstract
A method for improving breakdown voltage of a Laterally Diffused Metal Oxide Semiconductor (LDMOS) includes biasing a first well of a Field Effect Transistor (FET) to a first voltage. The first well is laterally separated from a second well. An isolation ring is charged to a second voltage in response to the first voltage exceeding a breakdown voltage of a diode connected between the isolation ring and the first well. The isolation ring laterally surrounds the FET and contacts a buried layer (BL) extending below the first well and the second well. A substrate is biased to a third voltage being less than or equal to the first voltage. The substrate laterally extends below the BL and contacts the BL.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile