The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 21, 2023
Filed:
Mar. 11, 2021
Nxp B.v., Eindhoven, NL;
Xin Lin, Phoenix, AZ (US);
Ronghua Zhu, Chandler, AZ (US);
Zhihong Zhang, Chandler, AZ (US);
Yujing Wu, Chandler, AZ (US);
Pete Rodriquez, Phoenix, AZ (US);
NXP B.V., Eindhoven, NL;
Abstract
A method for manufacturing a semiconductor device includes forming a plate structure over an isolation region. A drain electrode electrically connected to a drift region underlying the isolation region is formed, wherein the drain electrode is separated from a first location of the plate structure by a first distance along a central axis of an active area of the semiconductor device in a direction of a current flow between a source and a drain of the semiconductor device, the drain electrode is separated from a second location of the plate structure by a second distance along a line parallel to the central axis and within the active area. The first distance is less than the second distance.