The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 09, 2021
Filed:
Jan. 06, 2020
Nxp Usa, Inc., Austin, TX (US);
NXP USA, INC., Austin, TX (US);
Abstract
An apparatus comprises a Laterally Diffused Metal Oxide Semiconductor (LDMOS) comprising a drain connectable to a drift region and a source connectable to a body region. A diode comprises a cathode electrically coupled to the drift region, wherein during an operating condition, the anode is charged to a bias voltage less than a high voltage applied to the drain and greater than a low voltage applied to the source. The anode is laterally displaced from the drain by a first distance. A first deep trench isolation (DTI) is proximate to the source and disposed to laterally surround the LDMOS. A shield junction is proximate to the first DTI and on an opposite side of the source, and electrically connected to the anode.