The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2022
Filed:
Aug. 25, 2020
Nxp Usa, Inc., Austin, TX (US);
Xin Lin, Phoenix, AZ (US);
Ronghua Zhu, Chandler, AZ (US);
Xu Cheng, Chandler, AZ (US);
Yujing Wu, Chandler, AZ (US);
Zhihong Zhang, Chandler, AZ (US);
NXP USA, INC., Austin, TX (US);
Abstract
A device () includes a substrate (-) with an upper semiconductor layer, buried semiconductor layer, and a DTI structure (-) defining an active device region; a dummy LDMOS device () in the active device region which includes a grounded drain (D) in a drift region (), a source (S, S) in a body region () which extends to contact the buried semiconductor layer, a gate electrode (G-G) formed so that the source and at least part of the gate electrode are connected with the body implant region, and a buffering semiconductor layer portion () adjacent the DTI structure; and one or more active LDMOS devices () positioned in the active device region to be separated from the DTI structure by the dummy LDMOS device () which reduces an electric field across the sidewall insulator layer () in the DTI structure.