The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 04, 2023

Filed:

Oct. 28, 2021
Applicant:

Nxp Usa, Inc., Austin, TX (US);

Inventors:

Ronghua Zhu, Chandler, AZ (US);

Xin Lin, Phoenix, AZ (US);

Todd Roggenbauer, Austin, TX (US);

Assignee:

NXP USA, INC., Austin, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 29/94 (2006.01); H01L 27/105 (2023.01);
U.S. Cl.
CPC ...
H01L 27/1203 (2013.01); H01L 27/105 (2013.01); H01L 29/94 (2013.01);
Abstract

A capacitor includes an electrode implemented in an electrode well of a substrate. The electrode well has a net N-type dopant concentration. The capacitor includes an electrode implemented in a conductive structure located above the substrate. The electrodes are separated by a dielectric layer located between the electrodes. A first tub region having a net P-type conductivity dopant concentration is located below and laterally surrounds the electrode well and a second tub region having a net N-type conductivity dopant concentration is located below and laterally surrounds the first tub region and the electrode well.


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