Company Filing History:

17 out of 124

Toyo Tanso Co., Ltd.

patents

3 out of 66

Kwansei Gakuin Educational Foundation

patents

2 out of 10,295

Tokyo Electron Limited

patents

where one patent can have more than one assignee

Years Active: 2005-2022

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18 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 11261539 - Method for manufacturing reformed sic wafer, epitaxial layer-attached sic wafer, method for manufacturing same, and surface treatment method (2022-03-01),

2. 10665485 - Heat treatment vessel for single-crystal silicon carbide substrate and etching method (2020-05-26),

3. 10665465 - Surface treatment method for SiC substrate (2020-05-26),

4. 10522386 - Susceptor and method for manufacturing same (2019-12-31),

5. 10388536 - Etching method for SiC substrate and holding container (2019-08-20),

6. 10358741 - Seed material for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon carbide (2019-07-23),

7. 10014176 - SiC substrate treatment method (2018-07-03),

8. 9991175 - Method for estimating depth of latent scratches in SiC substrates (2018-06-05),

9. 9725822 - Method for epitaxial growth of monocrystalline silicon carbide using a feed material including a surface layer containing a polycrystalline silicon carbide with a 3C crystal polymorph (2017-08-08),

10. 9704733 - Storing container, storing container manufacturing method, semiconductor manufacturing method, and semiconductor manufacturing apparatus (2017-07-11),

11. 9644894 - Semiconductor device manufacturing apparatus (2017-05-09),

12. 9570306 - Surface treatment method for single crystal SiC substrate, and single crystal SiC substrate (2017-02-14),

13. 9447517 - Seed material for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon (2016-09-20),

14. 9252206 - Unit for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon carbide (2016-02-02),

15. 9029219 - Semiconductor wafer manufacturing method, and semiconductor wafer (2015-05-12),

Title: The Innovative Journey of Satoru Nogami

Introduction: Satoru Nogami, a pioneering inventor hailing from Kanonji, Japan, has made significant contributions to the world of technology through his groundbreaking innovations.

Latest Patents: Nogami's latest patents focus on advancements in renewable energy technologies, particularly in the field of solar power generation and energy storage solutions.

Career Highlights: With a career spanning over two decades, Nogami has established himself as a leading figure in the renewable energy sector, holding multiple patents that have revolutionized the industry.

Collaborations: Throughout his career, Nogami has collaborated with top research institutions and universities to further his research and bring his innovative ideas to life. His partnerships have led to the development of cutting-edge technologies that are shaping the future of sustainable energy.

Conclusion: Satoru Nogami's relentless pursuit of innovation and his dedication to creating a more sustainable world have solidified his position as a visionary inventor in the field of renewable energy.

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Inventor’s Patent Attorneys refers to legal professionals with specialized expertise in representing inventors throughout the patent process. These attorneys assist inventors in navigating the complexities of patent law, including filing patent applications, conducting patent searches, and protecting intellectual property rights. They play a crucial role in helping inventors secure patents for their innovative creations.