The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2019
Filed:
Nov. 17, 2015
Toyo Tanso Co., Ltd., Osaka-shi, Osaka, JP;
Kwansei Gakuin Educational Foundation, Nishinomiya-shi, Hyogo, JP;
Satoshi Torimi, Kanonji, JP;
Masato Shinohara, Kanonji, JP;
Youji Teramoto, Kanonji, JP;
Norihito Yabuki, Kanonji, JP;
Satoru Nogami, Kanonji, JP;
Tadaaki Kaneko, Sanda, JP;
Koji Ashida, Sanda, JP;
Yasunori Kutsuma, Sanda, JP;
TOYO TANSO CO., LTD., Osaka-shi, JP;
KWANSEI GAKUIN EDUCATIONAL FOUNDATION, Nishinomiya-shi, JP;
Abstract
Provided is a method for controlling the rate of etching of a SiC substrate based on a composition of a storing container. The etching method of the present invention is for etching the SiC substrate by heating the SiC substrate under Si vapor pressure, in a state where the SiC substrate is stored in a crucible. The crucible is formed of a tantalum metal, and has a tantalum carbide layer provided on an internal space side of the tantalum metal, and a tantalum silicide layer provided on the side further toward the internal space side than the tantalum carbide layer. The rate of etching of the SiC substrate is controlled based on difference in a composition of the tantalum silicide layer.