Sanda, Japan

Tadaaki Kaneko

USPTO Granted Patents = 42 

 

Average Co-Inventor Count = 2.2

ph-index = 2

Forward Citations = 21(Granted Patents)


Location History:

  • Hyogo, JP (2008 - 2024)
  • Sanda, JP (2009 - 2024)

Company Filing History:


Years Active: 2008-2025

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Areas of Expertise:
Silicon Carbide
SiC Substrate
Epitaxial Growth
Aluminum Nitride
Semiconductor Manufacturing
Single Crystal Production
Temperature Distribution Evaluation
Surface Treatment
Nanometer Standards
Microfabrication Techniques
Vapor-Phase Epitaxy
Defect Prevention
42 patents (USPTO):Explore Patents

Title: **Innovations of Tadaaki Kaneko in SiC Substrate Manufacturing**

Introduction

Tadaaki Kaneko is an accomplished inventor based in Sanda, Japan, with a remarkable portfolio of 30 patents. His work primarily focuses on the advancements in silicon carbide (SiC) substrate manufacturing, a crucial element in the semiconductor industry. Kaneko’s innovative approaches aim to enhance the quality and efficiency of SiC substrates, which play a critical role in various electronic applications.

Latest Patents

Among his latest contributions, Kaneko has developed methods for manufacturing SiC substrates that effectively remove strain and achieve an exceptionally flat surface. One of his notable patents introduces a method that incorporates an etching step to treat a SiC substrate, ensuring an arithmetic average roughness (Ra) of equal to or less than 100 nm within an atmosphere containing silicon and carbon elements. This innovative technique allows for smoother surfaces akin to those polished through chemical mechanical polishing (CMP).

Another significant patent revolves around the creation of a SiC semiconductor substrate with a controlled step height in its growth layer. Kaneko's method employs a growth process in a SiC-Si equilibrium vapor pressure environment, enabling precise control over the structural characteristics of the substrate. This advancement not only enhances performance but also opens new avenues for SiC applications in high-efficiency electronic devices.

Career Highlights

Throughout his career, Tadaaki Kaneko has made significant contributions to the field of semiconductor technology. He has held notable positions at various esteemed institutions, including Kwansei Gakuin Educational Foundation and Toyota Tsusho Corporation, where he has collaborated on multiple research projects and initiatives aimed at improving semiconductor manufacturing processes.

Collaborations

Kaneko has had the privilege of working alongside distinguished colleagues, such as Koji Ashida and Naokatsu Sano. These collaborations have allowed for the exchange of ideas and the collective pursuit of innovative solutions in the realm of SiC technology and beyond.

Conclusion

Tadaaki Kaneko exemplifies the spirit of innovation within the semiconductor industry. His extensive patent portfolio reflects a commitment to developing advanced technologies that not only resolve existing challenges but also push the boundaries of what is achievable in SiC substrate manufacturing. His work continues to have a lasting impact on the field and inspires future advancements in semiconductor research and applications.

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