The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2025
Filed:
Sep. 24, 2020
Kwansei Gakuin Educational Foundation, Hyogo, JP;
Toyota Tsusho Corporation, Nagoya, JP;
Tadaaki Kaneko, Sanda, JP;
KWANSEI GAKUIN EDUCATIONAL FOUNDATION, Hyogo, JP;
TOYOTA TSUSHO CORPORATION, Nagoya, JP;
Abstract
The present invention addresses the problem of providing novel techniques for manufacturing a SiC substrate that enables reduced material loss when a strained layer is removed. The present invention is a method for manufacturing a SiC substratewhich includes a strained layer thinning step Sfor thinning a strained layerof a SiC substrate bodyby moving the strained layerto a surface side. Including such a strained layer thinning step Sin which the strain layer is moved to (concentrated toward) the surface side makes it possible to reduce material loss L when removing the strained layer