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Kwansei Gakuin Educational Foundation

USPTO Granted Patents = 77

% Expired Patents = 5.2

EPO Patents = 13

Trademarks = 1

Forward Citations = 140

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80 inventors (with patents filed for the assignee):

Tadaaki Kaneko (46 out of 50 patents)

Takuji Hatakeyama (25 out of 29 patents)

Daichi Dojima (14 out of 14 patents)

4. Koji Ashida (11 out of 11 patents)

5. Motoki Yanai (10 out of 23 patents)

6. Yasuhiro Kondo (9 out of 9 patents)

7. Yasunori Kutsuma (7 out of 7 patents)

8. Yasuyuki Sasada (7 out of 34 patents)

9. Yuko Yamaga (6 out of 6 patents)

10. Keiichi Nakamoto (5 out of 5 patents)

11. Kazushi Shiren (5 out of 10 patents)

12. Toshiaki Ikuta (5 out of 5 patents)

13. Noboru Ohtani (4 out of 22 patents)

14. Guofang Wang (4 out of 6 patents)

15. Yoshitaka Nishio (4 out of 28 patents)

Core Competencies:

Silicon Carbide

Epitaxial Growth

Semiconductor Substrate

Defect Prevention

Aluminum Nitride

Organic Electroluminescence

Polycyclic Aromatic Compounds

Single Crystal Manufacturing

Temperature Distribution

Data Analysis

Surface Treatment

Etching Methods

77 patents: Sort by Forward Citations

1. 12725240 - Heat treatment environment evaluation method and silicon carbide substrate (2026-09-01),

2. 12707891 - Polycyclic aromatic compound (2026-08-11),

3. 12692619 - Method for producing aluminum nitride substrate, aluminum nitride substrate, and method for suppressing introduction of dislocation into aluminum nitride growth layer (2026-07-28),

4. 12686945 - SiC substrate, SiC substrate production method, SiC semiconductor device, and SiC semiconductor device production method (2026-07-21),

5. 12638732 - Liquid crystal element and liquid crystal element production method (2026-05-26),

6. 12581873 - Method of manufacturing SiC semiconductor device and SiC semiconductor device (2026-03-17),

7. 12575380 - Evaluation method for silicon carbide substrates (2026-03-10),

8. 12571626 - Method for measuring etching amount, and measurement system therefor (2026-03-10),

9. 12540416 - Method for manufacturing a semiconductor substrate and method for suppressing occurrence of cracks in a growth layer (2026-02-03),

10. 12534825 - SiC epitaxial substrate manufacturing method and manufacturing device therefor (2026-01-27),

11. 12509795 - Method for manufacturing aluminum nitride substrate, aluminum nitride substrate, and method for forming aluminum nitride layer (2025-12-30),

12. 12473315 - Polycyclic aromatic compound (2025-11-18),

13. 12460315 - Method for manufacturing semiconductor substrates and method for suppressing introduction of displacement to growth layer (2025-11-04),

14. 12451348 - Method and device for manufacturing sic substrate, and method for reducing macro-step bunching of sic substrate (2025-10-21),

15. 12444481 - Data-analyzing method, data-analyzing device, and sample analyzer (2025-10-14),

Company Overview

Kwansei Gakuin Educational Foundation, based in Hyogo, Japan, is a prominent institution focused on advancing research and education in the field of silicon carbide semiconductors. The foundation specializes in various core technology topics, including epitaxial growth, semiconductor substrates, and defect prevention. Its research extends to materials such as aluminum nitride and polycyclic aromatic compounds, contributing to innovations in single crystal manufacturing and organic electroluminescence. This commitment to technological advancement positions Kwansei Gakuin as a key player in the semiconductor landscape.

Profile summary synthesized from public USPTO records and patent filings.

Company Badge

USPTO Data Jan 1 1976 - Oct 20 2026

77 Patents

#16 in Hyogo

#1,335 in Japan

#9,777 in the World

Kwansei Gakuin Educational Foundation

Forward Citations = 140

80 inventors:

Tadaaki Kaneko (46 out of 50 patents)

Takuji Hatakeyama (25 out of 29 patents)

Daichi Dojima (14 out of 14 patents)

4. Koji Ashida (11 out of 11 patents)

5. Motoki Yanai (10 out of 23 patents)

IDiyas Innovation Intelligence. (2026). Company Patent Portfolio: Kwansei Gakuin Educational Foundation. Retrieved from https://idiyas.com/company/kwansei-gakuin-educational-foundation

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

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