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Kwansei Gakuin Educational Foundation

USPTO Granted Patents = 67

EPO Patents = 11

Trademarks = 1

Forward Citations = 119

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75 inventors (with patents filed for the assignee):

Tadaaki Kaneko (38 out of 42 patents)

Takuji Hatakeyama (24 out of 28 patents)

Koji Ashida (11 out of 11 patents)

4. Daichi Dojima (10 out of 10 patents)

5. Motoki Yanai (10 out of 23 patents)

6. Yasuhiro Kondo (8 out of 8 patents)

7. Yasunori Kutsuma (7 out of 7 patents)

8. Yasuyuki Sasada (7 out of 34 patents)

9. Yuko Yamaga (6 out of 6 patents)

10. Keiichi Nakamoto (5 out of 5 patents)

11. Kazushi Shiren (5 out of 9 patents)

12. Toshiaki Ikuta (5 out of 5 patents)

13. Noboru Ohtani (4 out of 22 patents)

14. Guofang Wang (4 out of 6 patents)

15. Soichiro Nakatsuka (4 out of 4 patents)

Core Competencies:

Silicon Carbide Substrate

Organic Electroluminescent Element

Epitaxial Growth

Polycyclic Aromatic Compound

Semiconductor Manufacturing

Aluminum Nitride Substrate

Data Analysis Device

SiC Single Crystal

Temperature Distribution Evaluation

Symbiosis-Promoting Agent

Vapor-Phase Epitaxy

Graphene Precursor

67 patents: Sort by Forward Citations

1. 12509795 - Method for manufacturing aluminum nitride substrate, aluminum nitride substrate, and method for forming aluminum nitride layer (2025-12-30),

2. 12473315 - Polycyclic aromatic compound (2025-11-18),

3. 12460315 - Method for manufacturing semiconductor substrates and method for suppressing introduction of displacement to growth layer (2025-11-04),

4. 12451348 - Method and device for manufacturing sic substrate, and method for reducing macro-step bunching of sic substrate (2025-10-21),

5. 12444481 - Data-analyzing method, data-analyzing device, and sample analyzer (2025-10-14),

6. 12421624 - SiC substrate, SiC epitaxial substrate, SiC ingot and production methods thereof (2025-09-23),

7. 12398038 - Manufacturing method of modified aluminum nitride raw material, modified aluminum nitride raw material, manufacturing method of aluminum nitride crystals, and downfall defect prevention method (2025-08-26),

8. 12385158 - Method for manufacturing a semiconductor substrate by forming a growth layer on an underlying substrate having through holes (2025-08-12),

9. 12362175 - Method for manufacturing SiC substrate (2025-07-15),

10. 12325936 - Aluminum nitride substrate manufacturing method, aluminum nitride substrate, and method of removing strain layer introduced into aluminum nitride substrate by laser processing (2025-06-10),

11. 12325930 - Manufacturing device for SiC semiconductor substrate (2025-06-10),

12. 12320030 - Method of using sic container (2025-06-03),

13. 12255073 - Silicon carbide substrate manufacturing method, silicon carbide substrate, and method of removing strain layer introduced into silicon carbide substrate by laser processing (2025-03-18),

14. 12247319 - Method for producing a SiC seed crystal for growth of a SiC ingot by heat-treating in a main container made of a SiC material (2025-03-11),

15. 12237378 - Method for manufacturing SiC substrate (2025-02-25),

The Kwansei Gakuin Educational Foundation is a renowned private educational organization in Japan, offering a wide range of educational services. With a history dating back to 1889, it operates various educational institutions including Kwansei Gakuin University, a highly esteemed university known for its emphasis on the liberal arts. The foundation is committed to fostering comprehensive education, encouraging students to develop their intellect, character, and abilities to contribute to society.

This text is generated by artificial intelligence and may not be accurate.

Company Badge

USPTO Data Jan 1 1976 - Jan 6 2026

67 Patents

#20 in Hyogo

#1,415 in Japan

#10,750 in the World

Kwansei Gakuin Educational Foundation

Forward Citations = 119

75 inventors:

Tadaaki Kaneko (38 out of 42 patents)

Takuji Hatakeyama (24 out of 28 patents)

Koji Ashida (11 out of 11 patents)

4. Daichi Dojima (10 out of 10 patents)

5. Motoki Yanai (10 out of 23 patents)

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