Company Filing History:

11 out of 66

Kwansei Gakuin Educational Foundation

patents

6 out of 48

Toyota Tsusho Corporation

where one patent can have more than one assignee

Years Active: 2019-2025

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11 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 12325930 - Manufacturing device for SiC semiconductor substrate (2025-06-10),

2. 12320030 - Method of using sic container (2025-06-03),

3. 12237377 - SiC semiconductor substrate, and, production method therefor and production device therefor (2025-02-25),

4. 12131960 - Temperature distribution evaluation method, temperature distribution evaluation device, and soaking range evaluation method (2024-10-29),

5. 12020928 - SiC semiconductor substrate, method for manufacturing same, and device for manufacturing same (2024-06-25),

6. 11359307 - Vapour-phase epitaxial growth method, and method for producing substrate equipped with epitaxial layer (2022-06-14),

7. 10847342 - Reference sample with inclined support base, method for evaluating scanning electron microscope, and method for evaluating SiC substrate (2020-11-24),

8. 10699873 - Reference sample with inclined support base, method for evaluating scanning electron microscope, and method for evaluating SiC substrate (2020-06-30),

9. 10665465 - Surface treatment method for SiC substrate (2020-05-26),

10. 10508361 - Method for manufacturing semiconductor wafer (2019-12-17),

11. 10388536 - Etching method for SiC substrate and holding container (2019-08-20),

Title: Koji Ashida - Innovator in SiC Semiconductor Technology

Introduction

Koji Ashida is a prominent inventor based in Sanda, Japan, known for his significant contributions to the field of semiconductor technology. With a total of 11 patents to his name, Ashida has made remarkable advancements in the manufacturing of silicon carbide (SiC) semiconductor substrates.

Latest Patents

Among his latest innovations, Ashida has developed a manufacturing device for SiC semiconductor substrates. This device features a SiC container that generates silicon (Si) vapor and carbon (C) vapor during heat treatment, along with a high-temperature vacuum furnace capable of heating the SiC container in a silicon atmosphere. Additionally, he has disclosed a method for utilizing the SiC container to grow an epitaxial layer of single crystalline SiC on an underlying substrate, showcasing his expertise in enhancing semiconductor manufacturing processes.

Career Highlights

Throughout his career, Koji Ashida has worked with notable organizations, including the Kwansei Gakuin Educational Foundation and Toyota Tsusho Corporation. His experience in these institutions has allowed him to refine his skills and contribute to groundbreaking innovations in semiconductor technology.

Collaborations

Ashida has collaborated with esteemed colleagues such as Tadaaki Kaneko and Yasunori Kutsuma, further enriching his work and expanding the impact of his inventions in the semiconductor industry.

Conclusion

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5 patents (EPO):

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2 patents pending (EPO):

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