The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2025
Filed:
Nov. 05, 2019
Kwansei Gakuin Educational Foundation, Hyogo, JP;
Toyota Tsusho Corporation, Nagoya, JP;
Tadaaki Kaneko, Hyogo, JP;
Koji Ashida, Hyogo, JP;
Tomoya Ihara, Hyogo, JP;
Daichi Dojima, Hyogo, JP;
KWANSEI GAKUIN EDUCATIONAL FOUNDATION, Hyogo, JP;
TOYOTA TSUSHO CORPORATION, Nagoya, JP;
Abstract
An object of the present invention is to provide a SiC semiconductor substrate having a growth layer with a controlled step height, a manufacturing method thereof, and a manufacturing device thereof. The method includes: a growth process that grows a SiC substratein a SiC—Si equilibrium vapor pressure environment. In this way, when the SiC substrateis grown in the SiC—Si equilibrium vapor pressure environment, it is possible to provide a SiC semiconductor substrate in which the step height of the growth layer is controlled.