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Toyota Tsusho Corporation

USPTO Granted Patents = 49

EPO Patents = 10

Trademarks = 6

Forward Citations = 137

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90 inventors (with patents filed for the assignee):

Tadaaki Kaneko (25 out of 42 patents)

Daichi Dojima (9 out of 10 patents)

Koji Ashida (6 out of 11 patents)

4. Yasuharu Kase (5 out of 5 patents)

5. Takayuki Arai (5 out of 5 patents)

6. Kiyoshi Kawarazaki (5 out of 5 patents)

7. Yoshihisa Fujita (4 out of 5 patents)

8. Masakatsu Kumagai (4 out of 5 patents)

9. Yasunori Kutsuma (3 out of 7 patents)

10. Ryo Hashimoto (3 out of 3 patents)

11. Yoshitaka Nishio (3 out of 27 patents)

12. Toshio Iwasawa (3 out of 14 patents)

13. Moeko Matsubara (3 out of 3 patents)

14. Tomoya Ihara (3 out of 3 patents)

15. Natsuki Yoshida (3 out of 3 patents)

Core Competencies:

Silicon Carbide Substrate

Aluminum Nitride Substrate

Epitaxial Growth

Semiconductor Manufacturing

Thermoelectric Conversion

Knitting Structure Model

Endurance Testing Apparatus

Transportation Container

Vapour-Phase Epitaxy

Reinforcing Cloth Manufacturing

Absorbent Sheet Production

Nonferrous Material Sorting

49 patents: Sort by Forward Citations

1. 12509795 - Method for manufacturing aluminum nitride substrate, aluminum nitride substrate, and method for forming aluminum nitride layer (2025-12-30),

2. 12460315 - Method for manufacturing semiconductor substrates and method for suppressing introduction of displacement to growth layer (2025-11-04),

3. 12451348 - Method and device for manufacturing sic substrate, and method for reducing macro-step bunching of sic substrate (2025-10-21),

4. 12421624 - SiC substrate, SiC epitaxial substrate, SiC ingot and production methods thereof (2025-09-23),

5. 12398038 - Manufacturing method of modified aluminum nitride raw material, modified aluminum nitride raw material, manufacturing method of aluminum nitride crystals, and downfall defect prevention method (2025-08-26),

6. 12385158 - Method for manufacturing a semiconductor substrate by forming a growth layer on an underlying substrate having through holes (2025-08-12),

7. 12362175 - Method for manufacturing SiC substrate (2025-07-15),

8. 12325936 - Aluminum nitride substrate manufacturing method, aluminum nitride substrate, and method of removing strain layer introduced into aluminum nitride substrate by laser processing (2025-06-10),

9. 12325930 - Manufacturing device for SiC semiconductor substrate (2025-06-10),

10. 12320030 - Method of using sic container (2025-06-03),

11. 12255073 - Silicon carbide substrate manufacturing method, silicon carbide substrate, and method of removing strain layer introduced into silicon carbide substrate by laser processing (2025-03-18),

12. 12247319 - Method for producing a SiC seed crystal for growth of a SiC ingot by heat-treating in a main container made of a SiC material (2025-03-11),

13. 12237378 - Method for manufacturing SiC substrate (2025-02-25),

14. 12237377 - SiC semiconductor substrate, and, production method therefor and production device therefor (2025-02-25),

15. 12209328 - Method of manufacturing semiconductor substrate and epitaxial growth method (2025-01-28),

Toyota Tsusho Corporation is a leading global trading company specializing in the automotive sector. With its diverse business segments, Toyota Tsusho engages in the trading and distribution of automobiles, automotive parts, and related products, as well as provides logistics and financing services. The company operates a global network of offices and subsidiaries, contributing to the development of various industries and promoting sustainable growth.

This text is generated by artificial intelligence and may not be accurate.

Company Badge

USPTO Data Jan 1 1976 - Dec 30 2025

49 Patents

#25 in Nagoya

#1,704 in Japan

#13,866 in the World

Toyota Tsusho Corporation

Forward Citations = 137

90 inventors:

Tadaaki Kaneko (25 out of 42 patents)

Daichi Dojima (9 out of 10 patents)

Koji Ashida (6 out of 11 patents)

4. Yasuharu Kase (5 out of 5 patents)

5. Takayuki Arai (5 out of 5 patents)

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