The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2026
Filed:
Mar. 30, 2021
Kwansei Gakuin Educational Foundation, Hyogo, JP;
Toyo Aluminium Kabushiki Kaisha, Osaka, JP;
Toyota Tsusho Corporation, Aichi, JP;
Tadaaki Kaneko, Sanda, JP;
Daichi Dojima, Sanda, JP;
Taku Murakawa, Sanda, JP;
Moeko Matsubara, Osaka, JP;
Yoshitaka Nishio, Osaka, JP;
KWANSEI GAKUIN EDUCATIONAL FOUNDATION, Hyogo, JP;
TOYO ALUMINIUM KABUSHIKI KAISHA, Osaka, JP;
TOYOTA TSUSHO CORPORATION, Aichi, JP;
Abstract
A problem addressed by the present invention is to provide a novel technique with which is possible to suppress the introduction of dislocation into a growth layer. The present invention, which solves the above problem, is a method for producing an aluminum nitride substrate, the method including a processing step for removing part of silicon carbide substrate and forming a pattern that includes a minor angle, and a crystal growth step for forming an aluminum nitride growth layer on the silicon carbide substrate on which the patter has been formed. The present invention is also a method for suppressing the introduction of dislocation into the aluminum nitride growth layer, the method including a processing step for removing part of the silicon carbide substrate and forming a pattern that includes a minor angle before forming a growth layer on a base substrate.