The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 2026
Filed:
Mar. 30, 2021
Kwansei Gakuin Educational Foundation, Hyogo, JP;
Toyota Tsusho Corporation, Aichi, JP;
Tadaaki Kaneko, Sanda, JP;
Daichi Dojima, Sanda, JP;
KWANSEI GAKUIN EDUCATIONAL FOUNDATION, Hyogo, JP;
TOYOTA TSUSHO CORPORATION, Aichi, JP;
Abstract
An object of the present invention is to provide a novel technique capable of suppressing the occurrence of cracks in the growth layer. The present invention is a method for manufacturing a semiconductor substrate, which includes: an embrittlement processing step Sof reducing strength of an underlying substrate; and a crystal growth step Sof forming the growth layeron the underlying substrate. In addition, the present invention is a method for suppressing the occurrence of cracks in the growth layer, and this method includes an embrittlement processing step Sof reducing the strength of the underlying substratebefore forming the growth layeron the underlying substrate