The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2025
Filed:
Aug. 05, 2020
Kwansei Gakuin Educational Foundation, Hyogo, JP;
Toyota Tsusho Corporation, Nagoya, JP;
Tadaaki Kaneko, Hyogo, JP;
KWANSEI GAKUIN EDUCATIONAL FOUNDATION, Hyogo, JP;
TOYOTA TSUSHO CORPORATION, Nagoya, JP;
Abstract
The present invention addresses the problem of providing a novel technology which enables the achievement of a high-quality SiC substrate, a high-quality SiC epitaxial substrate, and a high-quality SiC ingot. The present invention is a method for producing an SiC substrate, said method comprising a heat treatment step Sfor heat treating an SiC base substrate, said heat treatment step Scomprising two or more steps among the steps (a), (b) and (c) described below. (a) a strained layer removal step Sfor removing a strained layerof the SiC base substrate. (b) a bunching removal step Sfor removing macro-step bunching (MSB) on the SiC base substrate. (c) a basal plane dislocation reduction step Sfor forming a growth layer, in which basal plane dislocations (BPD) are reduced, on the SiC base substrate