Company Filing History:
Years Active: 2024-2025
Title: Tomoya Ihara: Innovator in Semiconductor Technology
Introduction
Tomoya Ihara is a prominent inventor based in Hyogo, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on improving the efficiency and effectiveness of semiconductor substrates.
Latest Patents
Ihara's latest patents include a SiC semiconductor substrate and its associated production method and device. The objective of this invention is to provide a SiC semiconductor substrate with a growth layer that has a controlled step height. The manufacturing method involves a growth process that occurs in a SiC—Si equilibrium vapor pressure environment. This innovative approach allows for the precise control of the step height during the growth of the SiC substrate. Another notable patent is a temperature distribution evaluation method, along with a temperature distribution evaluation device and a soaking range evaluation method. This invention aims to evaluate the temperature distribution of a heating area in a heating device, particularly for high-temperature areas ranging from 1600-2200° C. This method addresses the challenges associated with evaluating temperature distribution due to the limitations of thermocouple materials.
Career Highlights
Throughout his career, Tomoya Ihara has worked with notable organizations, including the Kwansei Gakuin Educational Foundation and Toyota Tsusho Corporation. His experience in these companies has contributed to his expertise in semiconductor technology and innovation.
Collaborations
Ihara has collaborated with several professionals in his field, including Tadaaki Kaneko and Koji Ashida. These collaborations have further enhanced his work and contributions to semiconductor technology.
Conclusion
Tomoya Ihara is a distinguished inventor whose work in semiconductor technology has led to significant advancements. His innovative patents and collaborations reflect his commitment to improving the efficiency of semiconductor substrates.