Kwansei Gakuin Educational Foundation

Toyota Tsusho Corporation

Tomoya Ihara

Tadaaki Kaneko

Koji Ashida

Daichi Dojima

An object of the present invention is to provide a SiC semiconductor substrate having a growth layer with a controlled step height, a manufacturing method thereof, and a manufacturing device thereof. The method includes: a growth process that grows a SiC substratein a SiC—Si equilibrium vapor pressure environment. In this way, when the SiC substrateis grown in the SiC—Si equilibrium vapor pressure environment, it is possible to provide a SiC semiconductor substrate in which the step height of the growth layer is controlled.

SiC semiconductor substrate, and, production method therefor and production device therefor

To provide a new temperature distribution evaluation method, a temperature distribution evaluation device, and a soaking range evaluation method, as the temperature distribution evaluation method which evaluates a temperature distribution of a heating areaA provided in a heating device, the present invention is a temperature distribution evaluation method which, in the heating areaA, heats a semiconductor substrateand a transmitting and receiving bodyfor transporting a raw material to and from the semiconductor substrate, and evaluates a temperature distribution of the heating areaA on the basis of a substrate thickness variation amount A of the semiconductor substrate. Accordingly, temperature distribution evaluation can be implemented for a high temperature area at 1600-2200° C. or the like at which it is hard to evaluate the temperature distribution due to the limit of a thermocouple material.

Temperature distribution evaluation method, temperature distribution evaluation device, and soaking range evaluation method

An object of the present invention is to provide a SiC semiconductor substrate capable of reducing a density of basal plane dislocations (BPD) in a growth layer, a manufacturing method thereof, and a manufacturing device thereof. The method includes: a strained layer removal process Sthat removes a strained layer introduced on a surface of a SiC substrate; and an epitaxial growth process Sthat conducts growth under a condition that a terrace width W of the SiC substrate is increased. When a SiC semiconductor substrate is manufactured in such processes, the basal plane dislocations BPD in the growth layer can be reduced, and a yield of a SiC semiconductor device can be improved.

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Hyogo, Japan

Tomoya Ihara