The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2026
Filed:
Jan. 07, 2022
Kwansei Gakuin Educational Foundation, Hyogo, JP;
Toyota Tsusho Corporation, Aichi, JP;
Tadaaki Kaneko, Hyogo, JP;
Kiyoshi Kojima, Tokyo, JP;
KWANSEI GAKUIN EDUCATIONAL FOUNDATION, Hyogo, JP;
TOYOTA TSUSHO CORPORATION, Aichi, JP;
Abstract
The present invention addresses the problem of providing a novel technology for measuring an etching amount in heat treatment in which growth and etching proceed simultaneously. The present invention includes: a first substrate thickness measuring step Sfor measuring the thicknessD of a to-be-heat-treated semiconductor substrate; a second substrate thickness measuring step Sfor measuring the thicknessD of a heat-treated semiconductor substrate; a growth layer thickness measuring step Sfor measuring the thicknessD of a growth layerwhich has gone through crystal growth by heat treatment; and an etching amount calculating step Sfor calculating the etching amount ED on the basis of the thicknessD of the to-be-heat-treated semiconductor substrate, the thicknessD of the heat-treated semiconductor substrate, and the thicknessD of the growth layer