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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12777883 B1

PDFFull Text
Date of Patent:
Oct. 27, 2026

Filed:

Mar. 30, 2021

Method for producing aluminum nitride substrate, aluminum nitride substrate, and method for suppressing occurrence of cracks in aluminum nitride layer

Applicants:

Kwansei Gakuin Educational Foundation, Hyogo, JP;

Toyo Aluminium Kabushiki Kaisha, Osaka, JP;

Toyota Tsusho Corporation, Aichi, JP;

Inventors:

Tadaaki Kaneko, Sanda, JP;

Daichi Dojima, Sanda, JP;

Taku Murakawa, Sanda, JP;

Moeko Matsubara, Osaka, JP;

Yoshitaka Nishio, Osaka, JP;

Assignees:

KWANSEI GAKUIN EDUCATIONAL FOUNDATION, Hyogo, JP;

TOYO ALUMINIUM KABUSHIKI KAISHA, Osaka, JP;

TOYOTA TSUSHO CORPORATION, Aichi, JP;

Attorney:

Calfee, Halter & Griswold LLP

Primary Examiner:

Jack S Chen

Int. Cl.
CPC ...
H10P 72/00 (2026.01); H10D 62/832 (2025.01); H10D 62/85 (2025.01); H10W 42/00 (2026.01); H10W 72/30 (2026.01);
U.S. Cl.
CPC ...
H10P 72/0616 (2026.01); H10D 62/8325 (2025.01); H10D 62/8503 (2025.01); H10W 42/121 (2026.01); H10W 72/30 (2026.01);
Abstract

An object of the present invention is to provide a novel technique capable of suppressing the occurrence of cracks in an AlN layer. The present invention is a method for manufacturing an AlN substrate, the method including: an embrittlement processing step Sof reducing strength of a SiC underlying substrate; and a crystal growth step Sof forming an AlN layeron the SiC underlying substrate. In addition, the present invention is a method for suppressing the occurrence of cracks in the AlN layer, the method including the embrittlement processing step Sof reducing the strength of the SiC underlying substratebefore forming the AlN layeron the SiC underlying substrate

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Kaneko, Tadaaki. (2026). Method for producing aluminum nitride substrate, aluminum nitride substrate, and method for suppressing occurrence of cracks in aluminum nitride layer (U.S. Patent No. 12777883). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12777883

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