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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12509795 B1

PDFFull Text
Date of Patent:
Dec. 30, 2025

Filed:

Mar. 30, 2021

Method for manufacturing aluminum nitride substrate, aluminum nitride substrate, and method for forming aluminum nitride layer

Applicants:

Kwansei Gakuin Educational Foundation, Hyogo, JP;

Toyo Aluminium Kabushiki Kaisha, Osaka, JP;

Toyota Tsusho Corporation, Aichi, JP;

Inventors:

Tadaaki Kaneko, Sanda, JP;

Daichi Dojima, Sanda, JP;

Moeko Matsubara, Osaka, JP;

Yoshitaka Nishio, Osaka, JP;

Assignees:

KWANSEI GAKUIN EDUCATIONAL FOUNDATION, Hyogo, JP;

TOYO ALUMINIUM KABUSHIKI KAISHA, Osaka, JP;

TOYOTA TSUSHO CORPORATION, Aichi, JP;

Attorney:

Calfee, Halter & Griswold LLP

Primary Examiner:

Robert M Kunemund

Int. Cl.
CPC ...
C30B 23/02 (2006.01); C30B 23/06 (2006.01); C30B 29/40 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
C30B 23/025 (2013.01); C30B 23/063 (2013.01); C30B 29/403 (2013.01); H01L 21/02378 (2013.01); H01L 21/0243 (2013.01); H01L 21/0254 (2013.01);
Abstract

An object of the present invention is to provide a novel technique capable of manufacturing a large-diameter AlN substrate. The present invention is a method for manufacturing an AlN substrate, including a crystal growth step Sof forming an AlN layeron a SiC underlying substratehaving through holes. In addition, the present invention is a method for forming an AlN layer including the through hole formation step Sof forming the through holesin the SiC underlying substratebefore forming the AlN layeron the SiC underlying substrate

Find Patent Forward Citations

Kaneko, Tadaaki. (2025). Method for manufacturing aluminum nitride substrate, aluminum nitride substrate, and method for forming aluminum nitride layer (U.S. Patent No. 12509795). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12509795

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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