The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2025
Filed:
Mar. 30, 2021
Kwansei Gakuin Educational Foundation, Hyogo, JP;
Toyo Aluminium Kabushiki Kaisha, Osaka, JP;
Toyota Tsusho Corporation, Aichi, JP;
Tadaaki Kaneko, Sanda, JP;
Daichi Dojima, Sanda, JP;
Moeko Matsubara, Osaka, JP;
Yoshitaka Nishio, Osaka, JP;
KWANSEI GAKUIN EDUCATIONAL FOUNDATION, Hyogo, JP;
TOYO ALUMINIUM KABUSHIKI KAISHA, Osaka, JP;
TOYOTA TSUSHO CORPORATION, Aichi, JP;
Abstract
An object of the present invention is to provide a novel technique capable of manufacturing a large-diameter AlN substrate. The present invention is a method for manufacturing an AlN substrate, including a crystal growth step Sof forming an AlN layeron a SiC underlying substratehaving through holes. In addition, the present invention is a method for forming an AlN layer including the through hole formation step Sof forming the through holesin the SiC underlying substratebefore forming the AlN layeron the SiC underlying substrate