The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 17, 2019
Filed:
Nov. 08, 2016
Kwansei Gakuin Educational Foundation, Nishinomiya-shi, Hyogo, JP;
KWANSEI GAKUIN EDUCATIONAL FOUNDATION, Nishinomiya-shi, JP;
Abstract
In a first step, protrusions () are formed on a surface of an SiC substrate (), and the SiC substrate () is etched. In a second step, the protrusions () of the SiC substrate () are epitaxially grown through MSE process, and an epitaxial layer () containing threading screw dislocation, which has been largely grown in the vertical (c-axis) direction as a result of MSE process, is at least partially removed. In a third step, MSE process is performed again on the SiC substrate () after the second step, to cause epitaxial layers () containing no threading screw dislocation to be grown in the horizontal (a-axis) direction to be connected at the molecular level, so that one monocrystalline 4H—SiC semiconductor wafer () having a large area is generated throughout an Si-face or a C-face of the SiC substrate ().