The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2022
Filed:
Apr. 27, 2017
Kwansei Gakuin Educational Foundation, Nishinomiya, JP;
Tadaaki Kaneko, Sanda, JP;
Yasunori Kutsuma, Sanda, JP;
Koji Ashida, Sanda, JP;
Ryo Hashimoto, Sanda, JP;
KWANSEI GAKUIN EDUCATIONAL FOUNDATION, Nishinomiya, JP;
TOYOTA TSUSHO CORPORATION, Nagoya, JP;
Abstract
In a state in which a SiC container () of a material including polycrystalline SiC is housed in a TaC container () of a material including TaC and in which an underlying substrate () is housed in the SiC container (), the TaC container () is heated in an environment where a temperature gradient occurs in such a manner that inside of the TaC container () is at a Si vapor pressure. Consequently, C atoms sublimated by etching of the inner surface of the SiC container () are bonded to Si atoms in an atmosphere so that an epitaxial layer () of single crystalline 3C-SiC thereby grows on the underlying substrate ().