The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2020
Filed:
Nov. 17, 2015
Kwansei Gakuin Educational Foundation, Nishinomiya-shi, Hyogo, JP;
Toyo Tanso Co., Ltd., Osaka-shi, Osaka, JP;
Tadaaki Kaneko, Sanda, JP;
Koji Ashida, Sanda, JP;
Yasunori Kutsuma, Sanda, JP;
Satoshi Torimi, Kanonji, JP;
Masato Shinohara, Kanonji, JP;
Youji Teramoto, Kanonji, JP;
Norihito Yabuki, Kanonji, JP;
Satoru Nogami, Kanonji, JP;
KWANSEI GAKUIN EDUCATIONAL FOUNDATION, Nishinomiya-shi, JP;
TOYO TANSO CO., LTD., Osaka-shi, JP;
Abstract
Provided is a surface treatment method for a SiC substrate (), the method being capable of controlling whether to generate a step bunching or the type of step bunching that is generated. In the surface treatment method in which the surface of the SiC substrate () is etched by heating the SiC substrate () under Si vapor pressure, an etching mode and an etching depth which are determined at least on the basis of an etching rate, are controlled to etch the SiC substrate (), so that a surface pattern of the SiC substrate () after etching treatment is controlled.