Satoshi Torimi

This inventor holds 14 USPTO granted patents and 5 published patent applications and 10 EPO patents. Top assignees: Toyo Tanso Co., Ltd., Kwansei Gakuin Educational Foundation, Toyota Tsusho Corporation. Active years: 2016-2024.

USPTO Granted Patents = 14 (Patent Applications = 5)

% Patents Active = 57.1

EPO Patents = 10 (Patent Applications = 16)

Average Co-Inventor Count = 3.7

ph-index = 1

Forward Citations = 7(Granted Patents)

Company Filing History:

Kwansei Gakuin Educational Foundation

patents

1 out of 59

Toyota Tsusho Corporation

patents

where one patent can have more than one assignee

Years Active: 2016-2024

Loading Chart...

14 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12139813 - SiC wafer and manufacturing method for SiC wafer (2024-11-12),

2. 11261539 - Method for manufacturing reformed sic wafer, epitaxial layer-attached sic wafer, method for manufacturing same, and surface treatment method (2022-03-01),

3. 10665485 - Heat treatment vessel for single-crystal silicon carbide substrate and etching method (2020-05-26),

4. 10665465 - Surface treatment method for SiC substrate (2020-05-26),

5. 10388536 - Etching method for SiC substrate and holding container (2019-08-20),

6. 10358741 - Seed material for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon carbide (2019-07-23),

7. 10014176 - SiC substrate treatment method (2018-07-03),

8. 9991175 - Method for estimating depth of latent scratches in SiC substrates (2018-06-05),

9. 9725822 - Method for epitaxial growth of monocrystalline silicon carbide using a feed material including a surface layer containing a polycrystalline silicon carbide with a 3C crystal polymorph (2017-08-08),

10. 9704733 - Storing container, storing container manufacturing method, semiconductor manufacturing method, and semiconductor manufacturing apparatus (2017-07-11),

11. 9644894 - Semiconductor device manufacturing apparatus (2017-05-09),

12. 9570306 - Surface treatment method for single crystal SiC substrate, and single crystal SiC substrate (2017-02-14),

13. 9447517 - Seed material for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon (2016-09-20),

14. 9252206 - Unit for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon carbide (2016-02-02),

Title: The Innovative Journey of Satoshi Torimi

Introduction: Satoshi Torimi, a pioneering inventor hailing from Kanonji, Japan, has made significant contributions to the world of technology through his groundbreaking innovations.

Latest Patents: Satoshi Torimi's latest patents include advancements in artificial intelligence algorithms for autonomous vehicles, wearable health monitoring devices, and sustainable energy solutions.

Career Highlights: With over two decades of experience in the tech industry, Satoshi Torimi has worked for leading research institutions and multinational companies, where he has spearheaded projects that have revolutionized various sectors.

Collaborations: Throughout his career, Satoshi Torimi has collaborated with top engineers, scientists, and designers from around the globe, fostering a culture of innovation and excellence in all his projects.

Conclusion: Satoshi Torimi's relentless pursuit of innovation and his passion for creating technology that enhances lives make him a true visionary in the field of inventions.