The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2017
Filed:
Jun. 29, 2011
Satoshi Torimi, Kanonji, JP;
Satoru Nogami, Kanonji, JP;
Tsuyoshi Matsumoto, Kanonji, JP;
TOYO TANSO CO., LTD., Osaka, JP;
Abstract
Provided is a feed material for epitaxial growth of a monocrystalline silicon carbide capable of increasing the rate of epitaxial growth of silicon carbide. A feed materialfor epitaxial growth of a monocrystalline silicon carbide includes a surface layer containing a polycrystalline silicon carbide with a 3C crystal polymorph. Upon X-ray diffraction of the surface layer, a diffraction peak corresponding to a (111) crystal plane and a diffraction peak other than the diffraction peak corresponding to the (111) crystal plane are observed as diffraction peaks corresponding to the polycrystalline silicon carbide with a 3C crystal polymorph.