The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2024
Filed:
Jul. 24, 2019
Toyota Tsusho Corporation, Nagoya, JP;
Masatake Nagaya, Aichi, JP;
Takahiro Kanda, Aichi, JP;
Takeshi Okamoto, Aichi, JP;
Satoshi Torimi, Kagawa, JP;
Satoru Nogami, Kagawa, JP;
Makoto Kitabatake, Kagawa, JP;
TOYOTA TSUSHO CORPORATION, Aichi, JP;
Abstract
An object is to provide a SiC wafer in which a detection rate of an optical sensor can improved and a SiC wafer manufacturing method. The method includes: a satin finishing process Sof satin-finishing at least a back surfaceof a SiC wafer; an etching processof etching at least the back surfaceof the SiC waferby heating under Si vapor pressure after the satin finishing process S; and a mirror surface processing process Sof mirror-processing a main surfaceof the SiC waferafter the etching process S. Accordingly, it is possible to obtain a SiC wafer having the mirror-finished main surfaceand the satin-finished back surface