Aichi, Japan

Masatake Nagaya



Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2024-2025

Loading Chart...
Loading Chart...
2 patents (USPTO):

Title: Masatake Nagaya: Innovator in SiC Substrate Technology

Introduction

Masatake Nagaya is a prominent inventor based in Aichi, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of silicon carbide (SiC) substrates. With a total of 2 patents, his work focuses on enhancing the quality and performance of SiC wafers.

Latest Patents

Nagaya's latest patents include a method for manufacturing SiC substrates and a manufacturing method for SiC wafers. The first patent addresses the challenge of producing a SiC substrate that achieves a flat surface comparable to that of a surface subjected to chemical mechanical polishing (CMP). This method involves an etching step that utilizes an atmosphere containing silicon and carbon elements to remove strain and achieve the desired surface quality. The second patent aims to improve the detection rate of optical sensors by detailing a manufacturing method that includes a satin finishing process, an etching process under silicon vapor pressure, and a mirror surface processing step. This innovative approach results in a SiC wafer with a mirror-finished main surface and a satin-finished back surface.

Career Highlights

Throughout his career, Masatake Nagaya has worked with notable organizations, including Toyota Tsusho Corporation and Kwansei Gakuin Educational Foundation. His experience in these companies has allowed him to refine his expertise in semiconductor technology and contribute to advancements in the field.

Collaborations

Nagaya has collaborated with esteemed colleagues such as Tadaaki Kaneko and Takahiro Kanda. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Masatake Nagaya's contributions to SiC substrate technology exemplify his dedication to innovation in the semiconductor industry. His patents reflect a commitment to improving the quality and functionality of SiC wafers, making a significant impact in the field.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…