The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 25, 2025

Filed:

Aug. 05, 2020
Applicants:

Kwansei Gakuin Educational Foundation, Hyogo, JP;

Toyota Tsusho Corporation, Nagoya, JP;

Inventors:

Masatake Nagaya, Aichi, JP;

Tadaaki Kaneko, Hyogo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/306 (2006.01); H01L 21/02 (2006.01); H01L 21/304 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); H01L 21/02378 (2013.01); H01L 21/02529 (2013.01); H01L 21/304 (2013.01); H01L 21/30625 (2013.01);
Abstract

An object to be solved by the present invention is to provide a new technology for producing a SiC substrate in which strain is removed and capable of achieving a flat surface as flat as a surface that has been subjected to CMP. The present invention, which solves the above object, is a method for producing a SiC substrate, the method including an etching step of etching a SiC substrate having arithmetic average roughness (Ra) of a surface of equal to or less than 100 nm in an atmosphere containing Si element and C element.


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