The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 2018
Filed:
Nov. 17, 2015
Applicant:
Toyo Tanso Co., Ltd., Osaka-shi, Osaka, JP;
Inventors:
Assignee:
TOYO TANSO CO., LTD., Osaka-shi, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/04 (2006.01); H01L 21/306 (2006.01);
U.S. Cl.
CPC ...
H01L 21/046 (2013.01); H01L 21/306 (2013.01);
Abstract
Provided is a SiC substrate treatment method for, with respect to a SiC substrate () that has, on its surface, grooves (), activating ions while preventing roughening of the surface of the substrate. In the method, an ion activation treatment in which the SiC substrate () is heated under Si vapor pressure is performed to the SiC substrate () has, on its surface, an ion implantation region () in which ions have been implanted, and has the grooves () provided in a region including at least the ion implantation region (), thereby ions that are implanted in the SiC substrate () is activated while etching the surface of the substrate.