Toyo Tanso Co., Ltd.

Kwansei Gakuin Educational Foundation

Satoshi Torimi

Satoru Nogami

Norihito Yabuki

Tsuyoshi Matsumoto

Masato Shinohara

Youji Teramoto

Tadaaki Kaneko

Koji Ashida

Yasunori Kutsuma

Yusuke Sudo

Makoto Kitabatake

Takuya Sakaguchi

In a method for manufacturing a reformed SiC wafer(a surface treatment method for a SiC wafer) having its surface that is reformed by processing an untreated SiC waferbefore formation of an epitaxial layerthe method includes a surface reforming step as described below. That is, the untreated SiC waferincludes BPDs as dislocations parallel to an inside of a (0001) face, and TEDs. Property of the surface of the untreated SiC waferis changed so as to have higher rate in which portions having BPDs on the surface of the untreated SiC waferpropagate as TEDs at a time of forming the epitaxial layer

Method for manufacturing reformed sic wafer, epitaxial layer-attached sic wafer, method for manufacturing same, and surface treatment method

A heat treatment container () is provided with support members () for supporting a disc-shaped SiC substrate (), which is an object, at a time of an etching treatment of the SiC substrate (). Each of the support members () has an inclined surface (F) for supporting a lower surface end (E) of the SiC substrate (), the inclined surface being inclined so as to increasingly approach the centerline of the SiC substrate () going downward. More specifically, each of the support members () is formed in a conical shape with a diameter that increases going downward, and a conical surface which is the peripheral surface of each supporting member forms the inclined surface (F). A vertically-middle section of the inclined surface (F) contacts the lower surface end (E) of the SiC substrate ().

Heat treatment vessel for single-crystal silicon carbide substrate and etching method

Provided is a surface treatment method for a SiC substrate (), the method being capable of controlling whether to generate a step bunching or the type of step bunching that is generated. In the surface treatment method in which the surface of the SiC substrate () is etched by heating the SiC substrate () under Si vapor pressure, an etching mode and an etching depth which are determined at least on the basis of an etching rate, are controlled to etch the SiC substrate (), so that a surface pattern of the SiC substrate () after etching treatment is controlled.

Surface treatment method for SiC substrate

Provided is a method for controlling the rate of etching of a SiC substrate based on a composition of a storing container. The etching method of the present invention is for etching the SiC substrate by heating the SiC substrate under Si vapor pressure, in a state where the SiC substrate is stored in a crucible. The crucible is formed of a tantalum metal, and has a tantalum carbide layer provided on an internal space side of the tantalum metal, and a tantalum silicide layer provided on the side further toward the internal space side than the tantalum carbide layer. The rate of etching of the SiC substrate is controlled based on difference in a composition of the tantalum silicide layer.

Etching method for SiC substrate and holding container

Provided is an inexpensive seed material for liquid phase epitaxial growth of silicon carbide. A seed materialfor liquid phase epitaxial growth of a monocrystalline silicon carbide includes a surface layer containing a polycrystalline silicon carbide with a 3C crystal polymorph. Upon X-ray diffraction of the surface layer thereof, a first-order diffraction peak corresponding to a (111) crystal plane is observed as a diffraction peak corresponding to the polycrystalline silicon carbide with a 3C crystal polymorph but no other first-order diffraction peak having a diffraction intensity of 10% or more of the diffraction intensity of the first-order diffraction peak corresponding to the (111) crystal plane is observed.

Seed material for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon carbide

Provided is a SiC substrate treatment method for, with respect to a SiC substrate () that has, on its surface, grooves (), activating ions while preventing roughening of the surface of the substrate. In the method, an ion activation treatment in which the SiC substrate () is heated under Si vapor pressure is performed to the SiC substrate () has, on its surface, an ion implantation region () in which ions have been implanted, and has the grooves () provided in a region including at least the ion implantation region (), thereby ions that are implanted in the SiC substrate () is activated while etching the surface of the substrate.

SiC substrate treatment method

This method for estimating the depth of latent scratches in SiC substrates includes an etching step, a measurement step, and an estimation step. In the etching step, a SiC substrate in which at least the surface is formed from single crystal SiC, and which has been subjected to machining, is subjected to heat treatment under Si atmosphere to etch the surface of the SiC substrate. In the measurement step, the surface roughness or the residual stress of the SiC substrate which has been subjected to the etching step is measured. In the estimation step, the depth of latent scratches or the presence or absence of latent scratches in the SiC substrate before the etching step are estimated on the basis of the results obtained in the measurement step.

Method for estimating depth of latent scratches in SiC substrates

Provided is a feed material for epitaxial growth of a monocrystalline silicon carbide capable of increasing the rate of epitaxial growth of silicon carbide. A feed materialfor epitaxial growth of a monocrystalline silicon carbide includes a surface layer containing a polycrystalline silicon carbide with a 3C crystal polymorph. Upon X-ray diffraction of the surface layer, a diffraction peak corresponding to a (111) crystal plane and a diffraction peak other than the diffraction peak corresponding to the (111) crystal plane are observed as diffraction peaks corresponding to the polycrystalline silicon carbide with a 3C crystal polymorph.

Method for epitaxial growth of monocrystalline silicon carbide using a feed material including a surface layer containing a polycrystalline silicon carbide with a 3C crystal polymorph

The present invention is to provide a storing container wherein Si does not drop onto a single crystal SiC substrate, and Si pressure distribution in an internal space can be made uniform. This storing container stores therein a single crystal SiC substrate to be etched by means of a heat treatment under Si vapor pressure. The storing container is formed of a tantalum metal, and has a tantalum carbide layer provided on an internal space side, and a tantalum silicide layer provided on the side further toward the internal space side than the tantalum carbide layer. The tantalum silicide layer supplies Si to the internal space. Furthermore, the tantalum silicide layer is different from adhered Si, and does not melt and drop.

Storing container, storing container manufacturing method, semiconductor manufacturing method, and semiconductor manufacturing apparatus

Provided is a heat treatment container having a small size and capable of efficiently performing a heat treatment on a SiC substrate. A heat treatment container is a container for a heat treatment on a SiC substrateunder Si vapor pressure. The SiC substrateis made of, at least in a surface thereof, single crystal SiC. The heat treatment container includes a container partand a substrate holder. The container partincludes an internal spacein which Si vapor pressure is caused. The internal spaceis partially open. The substrate holderis able to support the SiC substrate. When the substrate holdersupports the SiC substrate, an open portion of the container partis covered so that the internal spaceis hermetically sealed.

Semiconductor device manufacturing apparatus

The present application aims to provide a surface treatment method that is able to accurately control the rate of etching a single crystal SiC substrate and thereby enables correct understanding of the amount of etching. In the surface treatment method, the single crystal SiC substrate is etched by a heat treatment performed under Si vapor pressure. At a time of the etching, inert gas pressure in an atmosphere around the single crystal SiC substrate is adjusted to control the rate of etching. Accordingly, correct understanding of the amount of etching is obtained.

Surface treatment method for single crystal SiC substrate, and single crystal SiC substrate

Provided is an inexpensive seed material for liquid phase epitaxial growth of silicon carbide. A seed materialfor liquid phase epitaxial growth of a monocrystalline silicon carbide includes a surface layer containing a polycrystalline silicon carbide with a 3C crystal polymorph. Upon Raman spectroscopic analysis of the surface layer with an excitation wavelength of 532 nm, a peak other than a TO peak and an LO peak is observed as a peak derived from the polycrystalline silicon carbide with a 3C crystal polymorph.

Seed material for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon

The cost of liquid phase epitaxial growth of a monocrystalline silicon carbide is reduced. A feed materialis such that when a surface layer thereof containing a polycrystalline silicon carbide with a 3C crystal polymorph is subjected to X-ray diffraction, a diffraction peak corresponding to a (111) crystal plane and a diffraction peak other than the diffraction peak corresponding to the (111) crystal plane are observed as diffraction peaks corresponding to the polycrystalline silicon carbide with a 3C crystal polymorph. A seed materialis such that when a surface layer thereof containing a polycrystalline silicon carbide with a 3C crystal polymorph is subjected to X-ray diffraction, a first-order diffraction peak corresponding to a (111) crystal plane is observed as a diffraction peak corresponding to the polycrystalline silicon carbide with a 3C crystal polymorph but no other first-order diffraction peak having a diffraction intensity of 10% or more of the diffraction intensity of the first-order diffraction peak corresponding to the (111) crystal plane is observed.

Unit for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon carbide

Growing community of inventors

Kanonji, Japan

Satoshi Torimi