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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9704733 B1

PDFFull Text
Date of Patent:
Jul. 11, 2017

Filed:

Nov. 15, 2013

Storing container, storing container manufacturing method, semiconductor manufacturing method, and semiconductor manufacturing apparatus

Applicant:

Toyo Tanso Co., Ltd., Osaka-shi, Osaka, JP;

Inventors:

Satoshi Torimi, Kanonji, JP;

Norihito Yabuki, Kanonji, JP;

Satoru Nogami, Kanonji, JP;

Assignee:

TOYO TANSO CO., LTD., Osaka, JP;

Attorney:

Westerman, Hattori, Daniels & Adrian, LLP

Primary Examiner:

Archene Turner

Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/673 (2006.01); C30B 29/36 (2006.01); C30B 33/12 (2006.01); H01L 21/3065 (2006.01); H01L 29/16 (2006.01); H01L 21/67 (2006.01); C30B 35/00 (2006.01); H01L 21/04 (2006.01); H01L 21/306 (2006.01); H01L 21/302 (2006.01); C23C 10/22 (2006.01); F27B 17/00 (2006.01); C23C 10/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/673 (2013.01); C23C 10/02 (2013.01); C23C 10/22 (2013.01); C30B 29/36 (2013.01); C30B 33/12 (2013.01); C30B 35/002 (2013.01); F27B 17/0025 (2013.01); H01L 21/046 (2013.01); H01L 21/302 (2013.01); H01L 21/3065 (2013.01); H01L 21/30604 (2013.01); H01L 21/6719 (2013.01); H01L 21/67069 (2013.01); H01L 29/1608 (2013.01);
Abstract

The present invention is to provide a storing container wherein Si does not drop onto a single crystal SiC substrate, and Si pressure distribution in an internal space can be made uniform. This storing container stores therein a single crystal SiC substrate to be etched by means of a heat treatment under Si vapor pressure. The storing container is formed of a tantalum metal, and has a tantalum carbide layer provided on an internal space side, and a tantalum silicide layer provided on the side further toward the internal space side than the tantalum carbide layer. The tantalum silicide layer supplies Si to the internal space. Furthermore, the tantalum silicide layer is different from adhered Si, and does not melt and drop.

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