The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2016
Filed:
Jun. 29, 2011
Applicants:
Satoshi Torimi, Kanonji, JP;
Satoru Nogami, Kanonji, JP;
Tsuyoshi Matsumoto, Kanonji, JP;
Inventors:
Assignee:
TOYO TANSO CO., LTD., Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 19/12 (2006.01); C30B 29/36 (2006.01); C30B 28/12 (2006.01);
U.S. Cl.
CPC ...
C30B 19/12 (2013.01); C30B 28/12 (2013.01); C30B 29/36 (2013.01); Y10T 428/26 (2015.01);
Abstract
Provided is an inexpensive seed material for liquid phase epitaxial growth of silicon carbide. A seed materialfor liquid phase epitaxial growth of a monocrystalline silicon carbide includes a surface layer containing a polycrystalline silicon carbide with a 3C crystal polymorph. Upon Raman spectroscopic analysis of the surface layer with an excitation wavelength of 532 nm, a peak other than a TO peak and an LO peak is observed as a peak derived from the polycrystalline silicon carbide with a 3C crystal polymorph.