The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 2017
Filed:
Nov. 15, 2013
Applicant:
Toyo Tanso Co., Ltd., Osaka-shi, Osaka, JP;
Inventors:
Assignee:
TOYO TANSO CO., LTD., Osaka-shi, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/04 (2006.01); C30B 29/36 (2006.01); C30B 33/12 (2006.01); C30B 31/22 (2006.01); H01L 21/3065 (2006.01); C30B 33/02 (2006.01); C30B 33/08 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0445 (2013.01); C30B 29/36 (2013.01); C30B 31/22 (2013.01); C30B 33/02 (2013.01); C30B 33/08 (2013.01); C30B 33/12 (2013.01); H01L 21/3065 (2013.01); H01L 29/1608 (2013.01);
Abstract
The present application aims to provide a surface treatment method that is able to accurately control the rate of etching a single crystal SiC substrate and thereby enables correct understanding of the amount of etching. In the surface treatment method, the single crystal SiC substrate is etched by a heat treatment performed under Si vapor pressure. At a time of the etching, inert gas pressure in an atmosphere around the single crystal SiC substrate is adjusted to control the rate of etching. Accordingly, correct understanding of the amount of etching is obtained.