The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 10, 2025

Filed:

May. 02, 2022
Applicants:

Kwansei Gakuin Educational Foundation, Nishinomiya, JP;

Toyota Tsusho Corporation, Nagoya, JP;

Inventors:

Tadaaki Kaneko, Sanda, JP;

Yasunori Kutsuma, Sanda, JP;

Koji Ashida, Sanda, JP;

Ryo Hashimoto, Sanda, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 35/00 (2006.01); C30B 23/02 (2006.01); C30B 23/06 (2006.01); C30B 29/36 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
C30B 23/063 (2013.01); C30B 23/025 (2013.01); C30B 29/36 (2013.01); C30B 35/00 (2013.01); H01L 21/02378 (2013.01); H01L 21/02389 (2013.01); H01L 21/02433 (2013.01); H01L 21/02529 (2013.01); H01L 21/02631 (2013.01);
Abstract

A manufacturing device of SiC semiconductor substrates includes a SiC container () in which Si vapor and C vapor are generated in the internal space during the heat treatment, and a high-temperature vacuum furnace () capable of heating the SiC container in Si atmosphere. The device can further be configured such that the SiC container is housed in Si atmosphere and an underlying substrate () is housed in the SiC container, and the high-temperature vacuum furnace is capable of heating with a temperature gradient.


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