The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2025
Filed:
Mar. 30, 2021
Kwansei Gakuin Educational Foundation, Hyogo, JP;
Toyota Tsusho Corporation, Aichi, JP;
Tadaaki Kaneko, Sanda, JP;
Daichi Dojima, Sanda, JP;
KWANSEI GAKUIN EDUCATIONAL FOUNDATION, Hyogo, JP;
TOYOTA TSUSHO CORPORATION, Aichi, JP;
Abstract
An object of the present invention is to provide a novel technique capable of manufacturing a large-diameter semiconductor substrate. The present invention is a method for manufacturing a semiconductor substrate including a crystal growth step Sof forming a growth layeron an underlying substratehaving through holes. In addition, the present invention is a method for forming a growth layerincluding the through hole formation step Sof forming through holesin the underlying substratebefore forming the growth layeron a surface of the underlying substrate