The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 11, 2025
Filed:
Aug. 05, 2020
Kwansei Gakuin Educational Foundation, Hyogo, JP;
Toyota Tsusho Corporation, Nagoya, JP;
Tadaaki Kaneko, Hyogo, JP;
Kiyoshi Kojima, Tokyo, JP;
KWANSEI GAKUIN EDUCATIONAL FOUNDATION, Hyogo, JP;
TOYOTA TSUSHO CORPORATION, Nagoya, JP;
Abstract
An object of the present invention is to provide a novel technology capable of achieving high-quality SiC seed crystal, SiC ingot, SiC wafer and SiC wafer with an epitaxial film. The present invention, which solves the above object, is a method for producing a SiC seed crystal for growth of a SiC ingot, the method including a heat treatment step of heat-treating a SiC single crystal in an atmosphere containing Si element and C element. As described above, by heat-treating the SiC single crystal in an atmosphere containing the Si element and the C element, it is possible to produce a high-quality SiC seed crystal in which strain and crystal defects are suppressed.