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For the Inventor, By the Inventor

Harriseahead, United Kingdom

Richard Hammond

This inventor holds 60 USPTO granted patents and 5 EPO patents, primarily in Semiconductor Technology (CPC class H01L). Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., Amberwave Systems Corporation, Qualcomm Incorporated. Active years: 2003-2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Richard Hammond. Retrieved from https://idiyas.com/inventor/richard-hammond

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 60

% Patents Active = 76.7


Average Co-Inventor Count = 3.2

ph-index = 13

Forward Citations = 1,710(Granted Patents)

Forward Citations (Not Self Cited) = 1,569(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Canton Cardiff, GB (2007)
  • Cardiff, GB (2007 - 2011)
  • Harriseahhead, GB (2012 - 2014)
  • Cambridge, MA (US) (2003 - 2015)
  • Stoke-on-Trent, GB (2005 - 2018)
  • Staffordshire, GB (2016 - 2019)
  • San Diego, CA (US) (2017 - 2019)
  • Harriseahead, GB (2006 - 2020)
  • Gwent, GB (2020 - 2022)
  • Newport, GB (2019 - 2023)

Company Filing History:

goldMedal28 out of 42,926 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents
silverMedal17 out of 85 
 
Amberwave Systems Corporation
 patents
bronzeMedal8 out of 45,002 
 
Qualcomm Incorporated
 patents
4. 5 out of 29 
 
Iqe Plc
 patents
5. 2 out of 1,562 
 
Agency for Science, Technology and Research
 patents

Years Active: 2003-2023

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Areas of Expertise:
Strained Material Layers
RF Circuits
Tunable Capacitors
Epitaxial Metal Electrodes
Dual Side Contacted Capacitor
III-V Semiconductor Structures
Localized Strain Fields
Porous Silicon Dicing
Backside Semiconductor Growth
Conductive Gate Electrodes
Tunable Permittivity
Thermal Conductivity
60 patents (USPTO):Explore Patents
1. 11757008 - Electronic device with 2-dimensional electron gas between polar-oriented rare-earth oxide layer grown over a semiconductor (2023-09-12),
2. 11611001 - Localized strain fields in epitaxial layer over cREO (2023-03-21),
3. 11495670 - Integrated epitaxial metal electrodes (2022-11-08),
4. 11355617 - Self-aligned collector heterojunction bipolar transistor (HBT) (2022-06-07),
5. 11355340 - Semiconductor material having tunable permittivity and tunable thermal conductivity (2022-06-07),
6. 10784348 - Porous semiconductor handle substrate (2020-09-22),
7. 10700012 - Porous silicon dicing (2020-06-30),
8. 10629735 - Reacted conductive gate electrodes and methods of making the same (2020-04-21),
9. 10510581 - Methods of forming strained-semiconductor-on-insulator device structures (2019-12-17),
10. 10418457 - Metal electrode with tunable work functions (2019-09-17),
11. 10290579 - Utilization of backside silicidation to form dual side contacted capacitor (2019-05-14),
12. 10164015 - Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same (2018-12-25),
13. 10158030 - CMOS and bipolar device integration including a tunable capacitor (2018-12-18),
14. 10134837 - Porous silicon post processing (2018-11-20),
15. 10050145 - Methods for forming semiconductor device structures (2018-08-14),

Title: Innovation and Contribution of Richard Hammond in Semiconductor Technologies

Introduction

Richard Hammond, a prolific inventor hailing from Harriseahead, GB, holds an impressive portfolio of 60 patents. His work in semiconductor technologies and electronic devices reflects his innovative approach to materials and engineering. Hammond's inventions focus on enhancing electronic performance through intricate layered structures.

Latest Patents

Among Richard Hammond’s latest patents, the development of an electronic device featuring a 2-dimensional electron gas situated between polar-oriented rare-earth oxide layers is notable. This layered structure includes a semiconductor device that is designed to improve functionality and efficiency. Additionally, he has developed a layered structure that facilitates the transmission of acoustic waves, involving a substrate layer and an epitaxial layer designed for intricate wave interactions. The periodicity of the wavelength is carefully calibrated to ensure optimized performance.

Career Highlights

Hammond has made significant contributions while working at renowned companies like Taiwan Semiconductor Manufacturing Company Ltd. and Amberwave Systems Corporation. His experiences at these firms have undoubtedly shaped his innovative mindset and technical expertise, allowing him to push the boundaries of semiconductor technology.

Collaborations

Collaboration is key in the field of innovation, and Richard Hammond has worked alongside notable colleagues such as Matthew T. Currie and Eugene A. Fitzgerald. Their combined efforts have resulted in advancements in semiconductor research and development, showcasing the importance of teamwork in achieving groundbreaking results.

Conclusion

Richard Hammond's contributions to semiconductor technology exemplify the spirit of innovation. His extensive patent portfolio and collaborative efforts with fellow inventors highlight the importance of continued research and development in pushing the boundaries of electronic device capabilities. As technology continues to evolve, Richard Hammond remains a prominent figure in pushing emerging innovations to new heights.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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