The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 17, 2019
Filed:
Jan. 06, 2017
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventors:
Thomas A. Langdo, Cambridge, MA (US);
Matthew T. Currie, Brookline, MA (US);
Richard Hammond, Staffordshire, GB;
Anthony J. Lochtefeld, Ipswich, MA (US);
Eugene A. Fitzgerald, Windham, NH (US);
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); H01L 21/02 (2006.01); H01L 21/84 (2006.01); H01L 27/12 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76254 (2013.01); H01L 21/0245 (2013.01); H01L 21/0251 (2013.01); H01L 21/02532 (2013.01); H01L 21/76259 (2013.01); H01L 21/76264 (2013.01); H01L 21/84 (2013.01); H01L 27/1203 (2013.01); H01L 29/66772 (2013.01); H01L 29/66916 (2013.01); H01L 29/7842 (2013.01); H01L 29/78603 (2013.01); H01L 29/78684 (2013.01); H01L 29/78687 (2013.01); H01L 21/02381 (2013.01); H01L 21/02502 (2013.01); H01L 21/02505 (2013.01); H01L 21/02521 (2013.01); H01L 21/76275 (2013.01);
Abstract
The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.