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For the Inventor, By the Inventor

Brookline, MA, United States of America

Matthew T Currie

USPTO Granted Patents = 98

 

Average Co-Inventor Count = 2.8

ph-index = 22

Forward Citations = 2,694(Granted Patents)

Forward Citations (Not Self Cited) = 2,491(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Boston, MA (US) (2003 - 2009)
  • Windham, NH (US) (2004 - 2012)
  • Brookline, MA (US) (2006 - 2020)

Company Filing History:

goldMedal52 out of 40,780 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents
silverMedal46 out of 85 
 
Amberwave Systems Corporation
 patents

Years Active: 2003-2020

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Areas of Expertise:
Strained Semiconductor Structures
Lattice-Mismatched Semiconductor
Hybrid Fin Field-Effect Transistors
Strained Channel DRAM Devices
Semiconductor Heterostructures
Reacted Conductive Gate Electrodes
RF Circuits
III-V Semiconductor Devices
Dislocation Defect Densities
Strained Material Layers
Semiconductor Device Fabrication
Impurity Gradients
98 patents (USPTO):Explore Patents
1. 10629735 - Reacted conductive gate electrodes and methods of making the same (2020-04-21),
2. 10510581 - Methods of forming strained-semiconductor-on-insulator device structures (2019-12-17),
3. 10164015 - Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same (2018-12-25),
4. 10050145 - Methods for forming semiconductor device structures (2018-08-14),
5. 9934964 - Semiconductor heterostructures having reduced dislocation pile-ups and related methods (2018-04-03),
6. 9923057 - Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same (2018-03-20),
7. 9812572 - Reacted conductive gate electrodes and methods of making the same (2017-11-07),
8. 9601623 - Methods for forming semiconductor device structures (2017-03-21),
9. 9548236 - Methods of forming strained-semiconductor-on-insulator device structures (2017-01-17),
10. 9508724 - Strained channel dynamic random access memory devices (2016-11-29),
11. 9431243 - Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication (2016-08-30),
12. 9343539 - Reacted conductive gate electrodes and methods of making the same (2016-05-17),
13. 9309607 - Semiconductor heterostructures having reduced dislocation pile-ups and related methods (2016-04-12),
14. 9293582 - Hybrid fin field-effect transistor structures and related methods (2016-03-22),
15. 9281376 - Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same (2016-03-08),

Title: The Innovative Journey of Matthew T Currie

Introduction: Matthew T Currie, a talented inventor hailing from Brookline, MA (US), has made significant contributions to the field of technology through his groundbreaking innovations.

Latest Patents: Matthew T Currie's latest patents showcase his ingenuity and forward-thinking approach to problem-solving in various industries.

Career Highlights: Throughout his illustrious career, Matthew T Currie has been recognized for his exceptional creativity and ability to transform ideas into tangible inventions that have the potential to shape the future.

Collaborations: Matthew T Currie has collaborated with leading companies, research institutions, and universities to further develop his inventions and bring them to market, solidifying his reputation as a visionary inventor.

Conclusion: Matthew T Currie's passion for innovation and his relentless pursuit of excellence continue to inspire the next generation of inventors, leaving an indelible mark on the world of technology.

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