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Salem, NH, United States of America

Amberwave Systems Corporation

USPTO Granted Patents = 85

Forward Citations = 3,548

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19 inventors (with patents filed for the assignee):

Matthew T Currie (46 out of 98 patents)

Eugene A Fitzgerald (40 out of 120 patents)

Anthony J Lochtefeld (35 out of 114 patents)

4. Richard Hammond (17 out of 60 patents)

5. Thomas A Langdo (14 out of 42 patents)

6. Mayank T Bulsara (9 out of 16 patents)

7. Christopher W Leitz (8 out of 25 patents)

8. Richard Charles Westhoff (7 out of 21 patents)

9. Eugene A Fitzergald (7 out of 7 patents)

10. Christopher J Vineis (6 out of 18 patents)

11. Glyn Braithwaite (4 out of 16 patents)

12. Vicky K Yang (4 out of 9 patents)

13. Nicole Gerrish (2 out of 3 patents)

14. Curtis D Gridley (2 out of 3 patents)

15. Dimitri A Antoniadis (2 out of 12 patents)

Core Competencies:

Lattice-Mismatched Semiconductors

Strained Semiconductor Structures

Heterojunction Field-Effect Transistors

Dynamic Random Access Memory

Fin Field-Effect Transistors

Silicon Germanium Platforms

Semiconductor Heterostructures

Gate Technology

Trench Capacitors

CMOS Processing

Strained Dual Channel Layers

Selective Relaxation

85 patents: Sort by Forward Citations

1. 7638842 - Lattice-mismatched semiconductor structures on insulators (2009-12-29),

2. 7626246 - Solutions for integrated circuit integration of alternative active area materials (2009-12-01),

3. 7615829 - Elevated source and drain elements for strained-channel heterojuntion field-effect transistors (2009-11-10),

4. 7594967 - Reduction of dislocation pile-up formation during relaxed lattice-mismatched epitaxy (2009-09-29),

5. 7588994 - Methods for forming strained-semiconductor-on-insulator device structures by mechanically inducing strain (2009-09-15),

6. 7566606 - Methods of fabricating semiconductor devices having strained dual channel layers (2009-07-28),

7. 7541208 - Methods for preserving strained semiconductor substrate layers during CMOS processing (2009-06-02),

8. 7504704 - Shallow trench isolation process (2009-03-17),

9. 7501351 - Relaxed SiGe platform for high speed CMOS electronics and high speed analog circuits (2009-03-10),

10. 7494881 - Methods for selective placement of dislocation arrays (2009-02-24),

11. 7465619 - Methods of fabricating dual layer semiconductor devices (2008-12-16),

12. 7439164 - Methods of fabricating semiconductor structures having epitaxially grown source and drain elements (2008-10-21),

13. 7432139 - Methods for forming dielectrics and metal electrodes (2008-10-07),

14. 7420201 - Strained-semiconductor-on-insulator device structures with elevated source/drain regions (2008-09-02),

15. 7416909 - Methods for preserving strained semiconductor substrate layers during CMOS processing (2008-08-26),

AmberWave Systems Corporation is a technology company specializing in advanced semiconductor materials and processes. Our focus is on developing innovative solutions for the semiconductor industry, enabling the creation of next-generation electronic devices. With our expertise in materials science and engineering, we have successfully commercialized a range of patented technologies that improve device performance and reliability. Our solutions include strained silicon, high-mobility channels, and advanced material deposition techniques. These technologies have been adopted by leading chip manufacturers worldwide, giving them a competitive edge in the market. At AmberWave Systems, we are committed to driving technological advancements and helping our customers unlock the full potential of their semiconductor designs.

This text is generated by artificial intelligence and may not be accurate.

Company Badge

USPTO Data Jan 1 1976 - Dec 23 2025

85 Patents

#2 in Salem, NH

#26 in New Hampshire

#4,218 in US

#8,666 in the World

Salem, NH, United States of America

Amberwave Systems Corporation

Forward Citations = 3,548

19 inventors:

Matthew T Currie (46 out of 98 patents)

Eugene A Fitzgerald (40 out of 120 patents)

Anthony J Lochtefeld (35 out of 114 patents)

4. Richard Hammond (17 out of 60 patents)

5. Thomas A Langdo (14 out of 42 patents)

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