The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 2009
Filed:
Jul. 26, 2006
Applicants:
Anthony J. Lochtefeld, Somerville, MA (US);
Matthew T. Currie, Brookline, MA (US);
Zhi-yuan Cheng, Lincoln, MA (US);
James Fiorenza, Wilmington, MA (US);
Inventors:
Anthony J. Lochtefeld, Somerville, MA (US);
Matthew T. Currie, Brookline, MA (US);
Zhi-Yuan Cheng, Lincoln, MA (US);
James Fiorenza, Wilmington, MA (US);
Assignee:
Amberwave Systems Corporation, Salem, NH (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/58 (2006.01);
U.S. Cl.
CPC ...
Abstract
Methods of forming areas of alternative material on crystalline semiconductor substrates, and structures formed thereby. Such areas of alternative material are suitable for use as active areas in MOSFETs or other electronic or opto-electronic devices.