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Glyn Braithwaite

USPTO Granted Patents = 16 (Patent Applications = 1)

Average Co-Inventor Count = 3.8

ph-index = 9

Forward Citations = 553(Granted Patents)

Location History:

Whitley Bay, GB (2010)
Hooksett, NH (US) (2004 - 2011)
Dresdsen, DE (2014)
Dresden, DE (2012 - 2016)

Company Filing History:

11 out of 40,780

Taiwan Semiconductor Manufacturing Comp. Ltd.

patents

4 out of 85

Amberwave Systems Corporation

Years Active: 2004-2016

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16 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 9431243 - Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication (2016-08-30),

2. 9219112 - Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication (2015-12-22),

3. 8987028 - Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication (2015-03-24),

4. 8809835 - RF circuits including transistors having strained material layers (2014-08-19),

5. 8796734 - Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication (2014-08-05),

6. 8704229 - Partial poly amorphization for channeling prevention (2014-04-22),

7. 8629477 - Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication (2014-01-14),

8. 8519436 - Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication (2013-08-27),

9. 8324660 - Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication (2012-12-04),

10. 8247798 - RF circuits including transistors having strained material layers (2012-08-21),

11. 7906776 - RF circuits including transistors having strained material layers (2011-03-15),

12. 7709828 - RF circuits including transistors having strained material layers (2010-05-04),

13. 7109516 - Strained-semiconductor-on-insulator finFET device structures (2006-09-19),

14. 7074623 - Methods of forming strained-semiconductor-on-insulator finFET device structures (2006-07-11),

15. 6933518 - RF circuits including transistors having strained material layers (2005-08-23),

Title: Glyn Braithwaite: Innovator in Semiconductor Technology

Introduction

Glyn Braithwaite is a prominent inventor based in Dresden, Germany. He has made significant contributions to the field of semiconductor technology, holding a total of 16 patents. His work focuses on improving the performance and reliability of semiconductor devices.

Latest Patents

Among his latest patents are innovations related to lattice-mismatched semiconductor structures. These patents include methods for reducing dislocation defect densities and techniques for device fabrication. Specifically, he has developed methods for the fabrication of monolithic lattice-mismatched semiconductor heterostructures. These structures feature limited area regions that are substantially exhausted of threading dislocations, enhancing the performance of semiconductor devices based on these heterostructures.

Career Highlights

Glyn Braithwaite has worked with notable companies in the semiconductor industry, including Taiwan Semiconductor Manufacturing Company Ltd. and Amberwave Systems Corporation. His experience in these organizations has allowed him to refine his expertise and contribute to groundbreaking advancements in semiconductor technology.

Collaborations

Throughout his career, Glyn has collaborated with esteemed colleagues such as Matthew T Currie and Anthony J Lochtefeld. These partnerships have fostered innovation and have been instrumental in the development of his patented technologies.

Conclusion

Glyn Braithwaite's contributions to semiconductor technology are noteworthy, with a strong portfolio of patents that reflect his innovative spirit. His work continues to influence the industry and pave the way for future advancements in semiconductor devices.

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