The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 11, 2006

Filed:

Jun. 06, 2003
Applicants:

Anthony J. Lochtefeld, Somerville, MA (US);

Thomas A. Langdo, Cambridge, MA (US);

Richard Hammond, Harriseahead, GB;

Matthew T. Currie, Windham, NH (US);

Glyn Braithwaite, Hooksett, NH (US);

Eugene A. Fitzgerald, Windham, NH (US);

Inventors:

Anthony J. Lochtefeld, Somerville, MA (US);

Thomas A. Langdo, Cambridge, MA (US);

Richard Hammond, Harriseahead, GB;

Matthew T. Currie, Windham, NH (US);

Glyn Braithwaite, Hooksett, NH (US);

Eugene A. Fitzgerald, Windham, NH (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/335 (2006.01); H01L 21/00 (2006.01); H01L 21/84 (2006.01); H01L 21/8234 (2006.01); H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract

The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.


Find Patent Forward Citations

Lochtefeld, Anthony. (2006). Methods of forming strained-semiconductor-on-insulator finfet device structures (U.S. Patent No. 7074623). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7074623

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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