Growing community of inventors

Dresden, Germany

Glyn Braithwaite

Average Co-Inventor Count = 3.84

ph-index = 9

The patent ph-index is calculated by counting the number of publications for which an author has been cited by other authors at least that same number of times.

Forward Citations = 553

Glyn BraithwaiteMatthew T Currie (14 patents)Glyn BraithwaiteAnthony J Lochtefeld (9 patents)Glyn BraithwaiteThomas A Langdo (9 patents)Glyn BraithwaiteRichard Hammond (8 patents)Glyn BraithwaiteJames Fiorenza (7 patents)Glyn BraithwaiteZhiyuan Cheng (7 patents)Glyn BraithwaiteEugene A Fitzgerald (2 patents)Glyn BraithwaitePeter Javorka (1 patent)Glyn BraithwaiteGlyn Braithwaite (16 patents)Matthew T CurrieMatthew T Currie (98 patents)Anthony J LochtefeldAnthony J Lochtefeld (114 patents)Thomas A LangdoThomas A Langdo (42 patents)Richard HammondRichard Hammond (60 patents)James FiorenzaJames Fiorenza (44 patents)Zhiyuan ChengZhiyuan Cheng (30 patents)Eugene A FitzgeraldEugene A Fitzgerald (120 patents)Peter JavorkaPeter Javorka (63 patents)
..
Inventor’s number of patents
..
Strength of working relationships

Company Filing History:

1. Taiwan Semiconductor Manufacturing Comp. Ltd. (11 from 40,780 patents)

2. Amberwave Systems Corporation (4 from 85 patents)

3. Globalfoundries Inc. (1 from 5,671 patents)


16 patents:

1. 9431243 - Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication

2. 9219112 - Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication

3. 8987028 - Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication

4. 8809835 - RF circuits including transistors having strained material layers

5. 8796734 - Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication

6. 8704229 - Partial poly amorphization for channeling prevention

7. 8629477 - Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication

8. 8519436 - Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication

9. 8324660 - Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication

10. 8247798 - RF circuits including transistors having strained material layers

11. 7906776 - RF circuits including transistors having strained material layers

12. 7709828 - RF circuits including transistors having strained material layers

13. 7109516 - Strained-semiconductor-on-insulator finFET device structures

14. 7074623 - Methods of forming strained-semiconductor-on-insulator finFET device structures

15. 6933518 - RF circuits including transistors having strained material layers

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12/24/2025
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