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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9343539 B1

PDFFull Text
Date of Patent:
May. 17, 2016

Filed:

Apr. 27, 2015

Reacted conductive gate electrodes and methods of making the same

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Matthew T. Currie, Brookline, MA (US);

Richard Hammond, Staffordshire, GB;

Assignee:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Attorney:

Slater Matsil, LLP

Primary Examiner:

Hoa B Trinh

Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 29/49 (2006.01); H01L 21/28 (2006.01); H01L 21/285 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01); H01L 29/165 (2006.01); H01L 29/78 (2006.01); H01L 29/45 (2006.01);
U.S. Cl.
CPC ...
H01L 29/49 (2013.01); H01L 21/2807 (2013.01); H01L 21/28255 (2013.01); H01L 21/28518 (2013.01); H01L 29/1054 (2013.01); H01L 29/165 (2013.01); H01L 29/45 (2013.01); H01L 29/665 (2013.01); H01L 29/7842 (2013.01); H01L 29/7848 (2013.01); H01L 29/6659 (2013.01);
Abstract

A semiconductor device and a method for fabricating a semiconductor device involve a semiconductor layer that includes a first material and a second material. The first and second materials can be silicon and germanium. A contact of the device has a portion proximal to the semiconductor layer and a portion distal to the semiconductor layer. The distal portion includes the first material and the second material. A metal layer formed adjacent to the relaxed semiconductor layer and adjacent to the distal portion of the contact is simultaneously reacted with the relaxed semiconductor layer and with the distal portion of the contact to provide metallic contact material.

Find Patent Forward Citations

Currie, Matthew. (2016). Reacted conductive gate electrodes and methods of making the same (U.S. Patent No. 9343539). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9343539

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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