The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2020
Filed:
Aug. 04, 2017
Applicant:
Qualcomm Incorporated, San Diego, CA (US);
Inventors:
Stephen Alan Fanelli, San Marcos, CA (US);
Richard Hammond, Gwent, GB;
Assignee:
QUALCOMM Incorporated, San Diego, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 23/31 (2006.01); H01L 21/02 (2006.01); H01L 21/78 (2006.01); H01L 27/12 (2006.01); H01L 21/20 (2006.01); H01L 21/306 (2006.01); H01L 21/683 (2006.01); H01L 21/762 (2006.01); H01L 21/84 (2006.01); H01L 23/528 (2006.01); H01L 23/00 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1083 (2013.01); H01L 21/0203 (2013.01); H01L 21/02532 (2013.01); H01L 21/02595 (2013.01); H01L 21/2007 (2013.01); H01L 21/30604 (2013.01); H01L 21/6835 (2013.01); H01L 21/76256 (2013.01); H01L 21/78 (2013.01); H01L 21/84 (2013.01); H01L 23/3114 (2013.01); H01L 23/528 (2013.01); H01L 24/94 (2013.01); H01L 27/1203 (2013.01); H01L 29/7803 (2013.01); H01L 21/02203 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 2221/68304 (2013.01); H01L 2221/68359 (2013.01); H01L 2224/11 (2013.01); H01L 2224/13022 (2013.01); H01L 2924/00 (2013.01); H01L 2924/00014 (2013.01);
Abstract
An integrated circuit (IC) may include an active device layer on a front-side surface of a semiconductor device substrate. The IC may also include a front-side dielectric layer having a first surface opposite a second surface, the first surface contacting the active device layer. The IC may further include a porous semiconductor handle substrate contacting the second surface of the front-side dielectric layer. The porous semiconductor handle substrate may be uniformly doped.