The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2022
Filed:
Oct. 01, 2019
Qualcomm Incorporated, San Diego, CA (US);
Ranadeep Dutta, Del Mar, CA (US);
Stephen Alan Fanelli, San Marcos, CA (US);
Richard Hammond, Gwent, GB;
QUALCOMM Incorporated, San Diego, CA (US);
Abstract
Certain aspects of the present disclosure generally relate to an integrated circuit (IC) having a heterojunction bipolar transistor (HBT) device. The HBT device generally includes an emitter region, a collector region, and a base region disposed between the emitter region and the collector region, the base region and the collector region comprising different semiconductor materials. The HBT device may also include an etch stop layer disposed between the collector region and the base region. The HBT device also includes an emitter contact, wherein the emitter region is between the emitter contact and the base region, and a collector contact, wherein the collector region is between the collector contact and the base region.