The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 18, 2018

Filed:

Feb. 13, 2017
Applicant:

Qualcomm Incorporated, San Diego, CA (US);

Inventors:

Shiqun Gu, San Diego, CA (US);

Gengming Tao, San Diego, CA (US);

Richard Hammond, San Diego, CA (US);

Ranadeep Dutta, Del Mar, CA (US);

Matthew Michael Nowak, San Diego, CA (US);

Francesco Carobolante, San Diego, CA (US);

Assignee:

QUALCOMM Incorporated, San Diego, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/93 (2006.01); H01L 29/20 (2006.01); H01L 29/22 (2006.01); H01L 29/47 (2006.01); H01L 29/737 (2006.01); H01L 29/66 (2006.01); H01L 27/06 (2006.01); H01L 21/822 (2006.01); H01L 23/00 (2006.01); H01L 23/66 (2006.01); H03H 11/34 (2006.01); H03H 11/04 (2006.01);
U.S. Cl.
CPC ...
H01L 29/93 (2013.01); H01L 21/8221 (2013.01); H01L 23/66 (2013.01); H01L 24/13 (2013.01); H01L 27/0688 (2013.01); H01L 29/20 (2013.01); H01L 29/22 (2013.01); H01L 29/47 (2013.01); H01L 29/66174 (2013.01); H01L 29/66242 (2013.01); H01L 29/7371 (2013.01); H03H 11/04 (2013.01); H03H 11/342 (2013.01); H01L 2224/13025 (2013.01);
Abstract

A tunable capacitor may include a first terminal having a first semiconductor component with a first polarity. The tunable capacitor may also include a second terminal having a second semiconductor component with a second polarity. The second component may be adjacent to the first semiconductor component. The tunable capacitor may further include a first conductive material electrically coupled to a first depletion region at a first sidewall of the first semiconductor component.


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