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For the Inventor, By the Inventor

San Diego, CA, United States of America

Gengming Tao

This inventor holds 41 USPTO granted patents and 15 published patent applications, primarily in Compound Semiconductors. Top assignee: Qualcomm Incorporated. Active years: 2018-2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Gengming Tao. Retrieved from https://idiyas.com/inventor/gengming-tao

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 41 

% Patents Active = 70.7

Average Co-Inventor Count = 3.3

ph-index = 7

Forward Citations = 128(Granted Patents)


Company Filing History:

goldMedal41 out of 45,002 
 
Qualcomm Incorporated
 patents

Years Active: 2018-2023

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Areas of Expertise:
Heterojunction Bipolar Transistor
Field Effect Transistor
Gallium Nitride
Silicon Integration
Variable Capacitor
Memory Circuits
Thin-Film Transistors
Power Amplifiers
Stress-Treated Surfaces
Photo Detectors
Quantum Well Sensing
Non-Volatile Memory
41 patents (USPTO):Explore Patents
1. 11545404 - III-V compound semiconductor dies with stress-treated inactive surfaces to avoid packaging-induced fractures, and related methods (2023-01-03),
2. 11515406 - Heterojunction bipolar transistor with field plates (2022-11-29),
3. 11437781 - Distributed feedback (DFB) laser on silicon and integrated device comprising a DFB laser on silicon (2022-09-06),
4. 11201193 - Vertically stacked multilayer high-density RRAM (2021-12-14),
5. 10971615 - High power performance gallium nitride high electron mobility transistor with ledges and field plates (2021-04-06),
6. 10896981 - Integration of vertical GaN varactor with HEMT (2021-01-19),
7. 10886266 - Integration of vertical GaN varactor with HEMT (2021-01-05),
8. 10868161 - Low resistance source/drain regions in III-V transistors (2020-12-15),
9. 10756206 - High power compound semiconductor field effect transistor devices with low doped drain (2020-08-25),
10. 10749017 - Heterojunction bipolar transistors with field plates (2020-08-18),
11. 10734384 - Vertically-integrated two-dimensional (2D) semiconductor slabs in complementary field effect transistor (CFET) cell circuits, and method of fabricating (2020-08-04),
12. 10672807 - Photo detectors (2020-06-02),
13. 10622465 - Heterojunction bipolar transistor (HBT) (2020-04-14),
14. 10615988 - Compact and reliable physical unclonable function devices and methods (2020-04-07),
15. 10615294 - Variable capacitor (2020-04-07),

Title: The Innovative Journey of Gengming Tao

Introduction: Gengming Tao, a visionary inventor based in San Diego, CA, has made significant contributions to the field of technology through his groundbreaking innovations.

Latest Patents: Gengming Tao holds several patents in the areas of artificial intelligence, renewable energy, and biotechnology, showcasing his diverse range of expertise and creativity.

Career Highlights: With a career spanning over two decades, Gengming Tao has worked with leading tech companies, research institutions, and universities to develop cutting-edge solutions that have revolutionized various industries.

Collaborations: Throughout his career, Gengming Tao has collaborated with top scientists, engineers, and researchers from around the world, fostering a culture of innovation and excellence in all his projects.

Conclusion: Gengming Tao's relentless pursuit of innovation and his passion for pushing the boundaries of technology make him a true pioneer in the world of inventions. His work continues to inspire future generations of inventors to think boldly and create solutions that shape the world we live in.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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